October 2013
FCB20N60
N-Channel SuperFET ? MOSFET
600 V, 20 A, 190 m ?
Features
? 650 V @T J = 150 °C
? Typ. R DS(on) = 150 m ?
? Ultra Low Gate Charge (Typ. Q g = 75 nC)
? Low Effective Output Capacitance (Typ. C oss .eff = 165 pF)
? 100% Avalanche Tested
? RoHS Compliant
Application
Description
SuperFET ? MOSFET is Fairchild Semiconductor ’s first genera-
tion of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low on-
resistance and lower gate charge performance. This technology
is tailored to minimize conduction loss, provide superior switch-
ing performance, dv/dt rate and higher avalanche energy. Con-
sequently, SuperFET MOSFET is very suitable for the switching
power applications such as PFC, server/telecom power, FPD
TV power, ATX power and industrial power applications.
? Lighting
? AC-DC Power Supply
? Solar Inverter
D
D
G
S
D 2 -PAK
G
MOSFET Maximum Ratings
T C = 25 o C unless otherwise noted
S
Symbol
Parameter
FCB20N60TM
Unit
V DSS
I D
Drain to Source Voltage
Drain Current
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
600
20
12.5
V
A
I DM
V GSS
Drain Current
Gate to Source Voltage
- Pulsed
(Note 1)
60.0
±30
A
V
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25 o C)
- Derate above 25 o C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
690
20
20.8
4.5
208
1.67
mJ
A
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +150
300
o
o
C
C
Thermal Characteristics
Thermal Resistance, Junction to Ambient (1 in pad of 2 oz copper), Max.
Symbol
R ? JC
R ? JA
Parameter
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.
2
FCB20N60TM
0.6
62.5
40
Unit
o C/W
?2005 Fairchild Semiconductor Corporation
FCB20N60 Rev. C1
1
www.fairchildsemi.com
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